PART |
Description |
Maker |
BFP62010 |
NPN Silicon Germanium RF Transistor C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG Infineon Technologies A...
|
NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
BFR740L3 |
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
BFP740FE6327 BFP740F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG Infineon Technologies A...
|
BFP690E6327 |
NPN Silicon Germanium RF Transistor
|
Infineon
|
BFP620FE7764 |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
RQG1003UQ-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
BFP640F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|